Applicability of molecular beam deposition for the growth of high-k oxides

Journal of Vacuum Science and Technology B

Volumn 29, Issue 1, 2011, Pages

  Grube, Matthias ^a   Martin, Dominik ^a   Weber, Walter M ^a   Mikolajick, Thomas ^a,b   Bierwagen, Oliver ^c   Geelhaar, Lutz ^d   Riechert, Henning ^d  

^a NAMLAB GGMBH   (Germany)

^b Nanoelectronic Materials   (Germany)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; DEPOSITION; DIELECTRIC MATERIALS; METAL INSULATOR BOUNDARIES; MOLECULAR BEAMS; SEMICONDUCTOR DEVICE MANUFACTURE; ZIRCONIA;

AS-GROWN FILMS; CAPACITANCE-EQUIVALENT THICKNESS; CRYSTALLIZATION BEHAVIOR; HIGH-K OXIDES; MATERIAL SCREENING; METAL INSULATOR METALS; MOLECULAR BEAM DEPOSITION; SEMICONDUCTOR INDUSTRY;

HIGH-K DIELECTRIC;

EID: 79551627017     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3526718     Document Type: Conference Paper

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