Annular spin-transfer memory element

IEEE Transactions on Nanotechnology

Volumn 10, Issue 1, 2011, Pages 129-134

  Kent, Andrew D ^a   Stein, Daniel L ^b  

^a NEW YORK UNIVERSITY   (United States)

^b NEW YORK UNIVERSITY   (United States)

Author keywords

Magnetic data storage; magnetic random access memory (MRAM); spin transfer

Indexed keywords

CURRENT FLOWING; CURRENT PULSE; FREE LAYERS; HELICITIES; HIGH CURRENTS; LOW IMPEDANCE; MAGNETIC DATA STORAGE; MAGNETIC HELICITY; MAGNETIC LAYERS; MAGNETIC MEMORIES; MAGNETIC RANDOM ACCESS MEMORIES; MAGNETIC RANDOM ACCESS MEMORY (MRAM); MAGNETIC REGION; MAGNETIC STATE; MAGNETIZATION DIRECTION; MAGNETIZATION STATE; MEMORY ELEMENT; NONMAGNETIC LAYERS; RING GEOMETRY; SPIN TRANSFER TORQUE; SPIN-POLARIZED CURRENTS; SPIN-TRANSFER;

ELECTRIC RESISTANCE; EQUIPMENT; MAGNETIC FIELD EFFECTS; MAGNETIC MATERIALS; MAGNETIZATION; MAGNETORESISTANCE; MRAM DEVICES;

MAGNETIC STORAGE;

EID: 79551619777     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2009.2033598     Document Type: Article

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