SCOPUS 정보 검색 플랫폼

Volumn 519, Issue 8, 2011, Pages 2516-2519

Photoluminescence and spin relaxation of MnZnO/GaN-based light-emitting diodes

(4) Chen, Lung Chien a Tien, Ching Ho a Luo, Yi Min a Mu, Chien Sheng a

a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY (Taiwan)

Author keywords

Gallium nitride; Light emitting diodes; Manganese zinc oxide; Metal organic chemical vapor deposition; Photoluminescence; Spin relaxation

Indexed keywords

GAN-BASED LIGHT-EMITTING DIODES; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; PL MEASUREMENTS; POLARIZATION COMPONENTS; SPIN RELAXATION; SPIN-POLARIZED; TIME-RESOLVED;

CIRCULAR POLARIZATION; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; INDUSTRIAL CHEMICALS; LIGHT EMISSION; LIGHT EMITTING DIODES; MAGNETIC FIELDS; MANGANESE; MANGANESE OXIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; PHOTOLUMINESCENCE; POLARIZATION; ZINC; ZINC OXIDE;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 79551490701 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.12.014 Document Type: Article

Times cited : (8)

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