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Volumn 25, Issue 8, 2004, Pages 1000-1003

Passive modelocking diode-end-pumped Yb:YAG laser with surface-state type of semiconductor saturable absorption mirror

Author keywords

Continuous wave modelocking; Semiconductor saturable absorption mirror; Surface state; Yb:YAG laser

Indexed keywords

LASER MODE LOCKING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; Q SWITCHING; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE STRUCTURE;

EID: 7944226228     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (1)

References (4)
  • 1
    • 84975586418 scopus 로고
    • Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: An A-FP-SA
    • Keller U, Miller D A B, Boyd G D, et al. Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: an A-FP-SA. Opt Lett, 1992, 17(7): 505
    • (1992) Opt Lett , vol.17 , Issue.7 , pp. 505
    • Keller, U.1    Miller, D.A.B.2    Boyd, G.D.3
  • 2
    • 0242575845 scopus 로고    scopus 로고
    • Passive modelocked diode-end-pumped Nd:YAG with semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition
    • Wang Yonggang, Ma Xiaoyu, Li Chunyong, et al. Passive modelocked diode-end-pumped Nd:YAG with semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition. Chinese Physics Letters, 2003, 20(11): 1960
    • (2003) Chinese Physics Letters , vol.20 , Issue.11 , pp. 1960
    • Wang, Y.1    Ma, X.2    Li, C.3
  • 3
    • 0028459656 scopus 로고
    • Diode-pumped 100 fs passively mode-locked Cr:LiSAF laser with an A-FPSA
    • Danailov M B, Cerullo G, Magni V, et al. Diode-pumped 100-fs passively mode-locked Cr:LiSAF laser with an A-FPSA. Opt Lett, 1994, 19(11): 792
    • (1994) Opt Lett , vol.19 , Issue.11 , pp. 792
    • Danailov, M.B.1    Cerullo, G.2    Magni, V.3
  • 4
    • 2942670260 scopus 로고    scopus 로고
    • Passive Q switching of flash-pumped Nd:YAG laser with ion-implanted GaAs
    • Wang Yonggang, Li Chaoyang, Ma Xiaoyu, et al. Passive Q switching of flash-pumped Nd:YAG laser with ion-implanted GaAs. Chinese Journal of Semiconductors, 2004, 25(2): 148
    • (2004) Chinese Journal of Semiconductors , vol.25 , Issue.2 , pp. 148
    • Wang, Y.1    Li, C.2    Ma, X.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.