Passive Q-switching in a flash-lamp pumped Nd:YAG laser with ion-implanted GaAs wafer

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 25, Issue 2, 2004, Pages 148-151

  Wang, Yonggang ^a   Li, Chaoyang ^b   Ma, Xiaoyu ^a   Zhang, Zhigang ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Flash lamp pumped; Ion implanted GaAs; Passive Q switching

Indexed keywords

ION IMPLANTATION; PUMPING (LASER); Q SWITCHING; SOLID STATE LASERS;

ABSORBER; FLASH LAMP PUMPED; OUTPUT COUPLER; PASSIVE Q SWITCHING; PULSE DURATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 2942670260     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

1. Shen Deyuan, Tang Dingyuan, Kong Jian. Passively Q-switched Yb:YAG laser with a GaAs output coupler. Opt Commun, 2002, 211: 271
2. Li Ping, Wang Qinpu, Gao Da, et al. Study of a passively Q-switched Nd:YAG laser with GaAs. Acta Optica Sinica, 2000, 20: 744
3. Gu Jianhui, Zhou Feng, Xie Wenjie, et al. Passive Q-switching of a diode-pumped Nd:YAG laser with a GaAs output coupler. Opt Commun, 1999, 165: 245
4. Tsou Y, Garmire E, Chen W, et al. Passive Q-switching of Nd:YAG lasers by use of bulk semiconductors. Opt Lett, 1993, 18(18): 1514
5. Kajava T T, Gaeta A L. Q-switching of a diode-pumped Nd:YAG laser with GaAs. Opt Lett, 1996, 21(16): 1244
6. Xu Zhongying, Luo Changping, Jin Shirong, et al. Effect of alloy disordering on exciton dynamics in InGaAs/GaAs quantum wells. Chinese Journal of Semiconductors, 1995, 16(2): 101 (in Chinese)