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Volumn 615 617, Issue , 2009, Pages 207-210

TEM investigations of graphene on 4H-SiC(0001)

Author keywords

Graphene layers; Scanning tunneling microscopy; Transmission electron microscopy

Indexed keywords

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MONOLAYERS; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAN DER WAALS FORCES;

EID: 79251559398     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.207     Document Type: Conference Paper
Times cited : (2)

References (11)
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  • 2
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  • 3
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    • doi:10.1103/PhysRevLett.61.2015 PMid:10038961
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    • Haldane, F.D.M.1
  • 11
    • 43049117196 scopus 로고    scopus 로고
    • Origin of anomalous electronic structures of epitaxial graphene on silicon carbide
    • DOI 10.1103/PhysRevLett.100.176802
    • S. Kim, J. Ihm, H. J. Choi and Y-W. Son: Phys. Rev. Letters Vol. 100 (2008), p. 176802 doi:10.1103/PhysRevLett.100.176802 PMid:18518318. (Pubitemid 351623401)
    • (2008) Physical Review Letters , vol.100 , Issue.17 , pp. 176802
    • Kim, S.1    Ihm, J.2    Choi, H.J.3    Son, Y.-W.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.