Investigation of on and off state characteristics of 4H-SiC DMOSFETs

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 805-808

  Potbhare, Siddharth ^a   Goldsman, Neil ^a   Akturk, Akin ^a   Lelis, Aivars ^b   Green, Ronald ^b  

^a UNIVERSITY OF MARYLAND   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

4H SiC DMOSFET; Avalanche breakdown; Device modeling; Impact ionization; On resistance

Indexed keywords

INTERFACE STATES; MOSFET DEVICES; SILICON CARBIDE; STATE ESTIMATION; SURFACE ROUGHNESS;

AVALANCHE BREAKDOWN; DEVICE MODELING; DMOSFET; INTERFACE TRAP DENSITY; INVERSION CHARGE; LATERAL MOSFETS; ON-RESISTANCE; SURFACE ROUGHNESS SCATTERING;

IMPACT IONIZATION;

EID: 79251555304     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.805     Document Type: Conference Paper

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