Characterization of Si volume- and delta-doped InGaAs grown by molecular beam epitaxy

Journal of Applied Physics

Volumn 107, Issue 9, 2010, Pages

  Fedoryshyn, Y ^a   Beck, M ^a   Kaspar, P ^a   Jaeckel, H ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AMPHOTERIC BEHAVIOR; BURSTEIN-MOSS SHIFT; CAPACITANCE VOLTAGE; CRYSTALLINE QUALITY; DELTA-DOPED; DELTA-DOPING; DOPED SAMPLE; DOPING CONCENTRATION; INP; LATTICE-MATCHED; PHOTOLUMINESCENCE MEASUREMENTS; SECONDARY ION MASS SPECTROSCOPY; SEMI-INSULATING SUBSTRATE; SI CONCENTRATION; SI-DOPING; VAN DER PAUW;

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

DOPING (ADDITIVES);

EID: 79251512315     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3388077     Document Type: Article

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