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Si flux was obtained from volume-doping experiments at Si cell temperature of 1230°C and In0.53 Ga0.47 As growth rate of 336 nm/h.
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Si flux was obtained from volume-doping experiments at Si cell temperature of 1230°C and In0.53 Ga0.47 As growth rate of 336 nm/h.
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16
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79251520581
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Since As level was the same (±5%) in all SIMS measurements, it was taken as a reference and Si/As ratios were normalised to 7.5× 1018 cm-3.
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Since As level was the same (±5%) in all SIMS measurements, it was taken as a reference and Si/As ratios were normalised to 7.5× 1018 cm-3.
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