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Volumn 107, Issue 9, 2010, Pages

Characterization of Si volume- and delta-doped InGaAs grown by molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

AMPHOTERIC BEHAVIOR; BURSTEIN-MOSS SHIFT; CAPACITANCE VOLTAGE; CRYSTALLINE QUALITY; DELTA-DOPED; DELTA-DOPING; DOPED SAMPLE; DOPING CONCENTRATION; INP; LATTICE-MATCHED; PHOTOLUMINESCENCE MEASUREMENTS; SECONDARY ION MASS SPECTROSCOPY; SEMI-INSULATING SUBSTRATE; SI CONCENTRATION; SI-DOPING; VAN DER PAUW;

EID: 79251512315     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3388077     Document Type: Article
Times cited : (20)

References (17)
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  • 4
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    • 0.43As on InP(001) grown between 390 and 575°C by molecular beam epitaxy
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  • 15
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    • Si flux was obtained from volume-doping experiments at Si cell temperature of 1230°C and In0.53 Ga0.47 As growth rate of 336 nm/h.
    • Si flux was obtained from volume-doping experiments at Si cell temperature of 1230°C and In0.53 Ga0.47 As growth rate of 336 nm/h.
  • 16
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    • Since As level was the same (±5%) in all SIMS measurements, it was taken as a reference and Si/As ratios were normalised to 7.5× 1018 cm-3.
    • Since As level was the same (±5%) in all SIMS measurements, it was taken as a reference and Si/As ratios were normalised to 7.5× 1018 cm-3.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.