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Journal of Applied Physics

Volumn 107, Issue 9, 2010, Pages

A single crystalline strontium titanate thin film transistor

(6) Uchida, Kosuke a Yoshikawa, Akira a Koumoto, Kunihito a Kato, Takeharu b Ikuhara, Yuichi b,c Ohta, Hiromichi a,d

a NAGOYA UNIVERSITY (Japan)

b JAPAN FINE CERAMICS CENTER (Japan)

c UNIVERSITY OF TOKYO (Japan)

d JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SINGLE CRYSTALS; FIELD-EFFECT MOBILITIES; ON/OFF CURRENT RATIO; OXYGEN ATMOSPHERE; POLYCRYSTALLINE; PULSED-LASER DEPOSITION TECHNIQUE; SINGLE-CRYSTALLINE; SRTIO; STRONTIUM TITANATE; SUBTHRESHOLD SWING; THERMAL ANNEALING TREATMENT; TRANSISTOR CHARACTERISTICS;

ANNEALING; CRYSTALLINE MATERIALS; EPITAXIAL FILMS; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; OXYGEN; PULSED LASER DEPOSITION; SINGLE CRYSTALS; STRONTIUM; STRONTIUM ALLOYS; STRONTIUM TITANATES; VAPOR DEPOSITION;

THIN FILM TRANSISTORS;

EID: 79251470406 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3407568 Document Type: Article

Times cited : (5)

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