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Volumn , Issue , 2010, Pages 69-72

Handshaking multiscale thermal model of nanostructured devices

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN TRANSPORT EQUATION; CONCURRENT COUPLING; DRIFT-DIFFUSION APPROXIMATION; FOURIER MODELS; HEAT DISSIPATION; MULTISCALE METHOD; MULTISCALES; NANO-STRUCTURED; PBTE; SELF-HEATING EFFECT; THERMAL MODEL;

EID: 78751679856     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.2010.5677942     Document Type: Conference Paper
Times cited : (2)

References (9)
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    • cited By (since 1996)
    • M. Povolotskyi and A. Di Carlo, "Elasticity theory of pseudomorphic heterostructures grown on substrates of arbitrary thickness," Journal of Applied Physics, vol. 100, no. 6, 2006, cited By (since 1996) 8.
    • (2006) Journal of Applied Physics , vol.100 , Issue.6 , pp. 8
    • Povolotskyi, M.1    Di Carlo, A.2
  • 2
    • 0025512595 scopus 로고
    • Rigorous Thermodynamic Treatment of Heat Generation and Conduction in Semiconductor Device Modeling
    • Nov.
    • G. K. Wachutka, "Rigorous Thermodynamic Treatment of Heat Generation and Conduction in Semiconductor Device Modeling," IEEE Transactions on Computer-Aided Design, vol. 11, pp. 1141-1149, Nov. 1990.
    • (1990) IEEE Transactions on Computer-Aided Design , vol.11 , pp. 1141-1149
    • Wachutka, G.K.1
  • 3
    • 33644530389 scopus 로고    scopus 로고
    • Boltzmann transport equation-based thermal modeling approaches for hotspots in microelectronic
    • J. Y. M. Sreekant V. J. Narumanchi and C. H. Amon, "Boltzmann transport equation-based thermal modeling approaches for hotspots in microelectronic," Heat and Mass Transfer, vol. 42, no. 6, pp. 478-491, 2006.
    • (2006) Heat and Mass Transfer , vol.42 , Issue.6 , pp. 478-491
    • Sreekant, J.Y.M.1    Narumanchi, V.J.2    Amon, C.H.3
  • 4
    • 23744494668 scopus 로고    scopus 로고
    • Comparison of different phonon transport models for predicting heat conduction in silicon-on-insulator transistors
    • [Online]. Available
    • S. V. J. Narumanchi, J. Y. Murthy, and C. H. Amon, "Comparison of different phonon transport models for predicting heat conduction in silicon-on-insulator transistors," Journal of Heat Transfer, vol. 127, no. 7, pp. 713-723, 2005. [Online]. Available: http://link.aip.org/link/?JHR/127/ 713/1
    • (2005) Journal of Heat Transfer , vol.127 , Issue.7 , pp. 713-723
    • Narumanchi, S.V.J.1    Murthy, J.Y.2    Amon, C.H.3
  • 8
    • 0035279282 scopus 로고    scopus 로고
    • Gallium nitride based high power heterojunction field effect transistors: Process development and present status at ucsb
    • S. Keller, Y.-F.Wu, G. Parish, N. Ziang, J. Xu, B. Keller, S. DenBaars, and U. Mishra, "Gallium nitride based high power heterojunction field effect transistors: process development and present status at ucsb," Electron Devices, IEEE Transactions on, vol. 48, no. 3, pp. 552-559, 2001.
    • (2001) Electron Devices, IEEE Transactions on , vol.48 , Issue.3 , pp. 552-559
    • Keller, S.1    Wu, Y.-F.2    Parish, G.3    Ziang, N.4    Xu, J.5    Keller, B.6    DenBaars, S.7    Mishra, U.8
  • 9
    • 70450270578 scopus 로고    scopus 로고
    • Simultaneous measurement of temperature and thermal stress in algan/gan high electron mobility transistors using raman scattering spectroscopy
    • T. Batten, J. M. Pomeroy, M. J. Uren, T. Martin, and M. Kuball, "Simultaneous measurement of temperature and thermal stress in algan/gan high electron mobility transistors using raman scattering spectroscopy," J. Appl. Phys., vol. 106, p. 094509, 2009.
    • (2009) J. Appl. Phys. , vol.106 , pp. 094509
    • Batten, T.1    Pomeroy, J.M.2    Uren, M.J.3    Martin, T.4    Kuball, M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.