Sheet resistance characterization of laser-doped lines on crystalline silicon wafers for photovoltaic applications

Solar Energy Materials and Solar Cells

Volumn 95, Issue 3, 2011, Pages 974-980

  Wang, Kee Soon ^a   Tjahjono, Budi S ^a   Wong, Johnson ^a   Uddin, Ashraf ^a   Wenham, Stuart R ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Four point probe; Laser doping; Sheet resistance characterization; Solar cell; TLM

Indexed keywords

CRYSTALLINE SILICON WAFERS; FORM LINES; FOUR-POINT PROBE; LASER DOPING; MEASUREMENT TECHNIQUES; METALLIZATIONS; MULTIPLE LASERS; OVERDOPING; PHOTOVOLTAIC APPLICATIONS; PROBING PADS; RECTANGULAR AREA; SINGLE LASERS; STRUCTURE-BASED; TLM; TLM METHOD; TRANSFER LENGTH METHODS; UPPER LIMIT VALUES;

CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ELECTRIC RESISTANCE; HIGH POWER LASERS; LASERS; PROBES; SEMICONDUCTING SILICON COMPOUNDS; SHEET RESISTANCE; SILICON NITRIDE; SOLAR CELLS;

SILICON WAFERS;

EID: 78751647542     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.12.002     Document Type: Article

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