SCOPUS 정보 검색 플랫폼

Journal of Radioanalytical and Nuclear Chemistry

Volumn 287, Issue 1, 2011, Pages 173-176

63Ni schottky barrier nuclear battery of 4H-SiC

(5) Li, Xiao Ying a Ren, Yong a Chen, Xue Jiao a Qiao, Da Yong a Yuan, Wei Zheng a

a NORTHWESTERN POLYTECHNICAL UNIVERSITY (China)

Author keywords

4H SiC; 63Ni; Betavoltaic battery; Schottky diode; Silicon carbide

Indexed keywords

NICKEL 63; SILICON CARBIDE;

ARTICLE; CORRELATION COEFFICIENT; ELECTRON; IONIZATION; MATHEMATICAL ANALYSIS; MATHEMATICAL MODEL; NUCLEAR ENERGY; PROCESS OPTIMIZATION; PROCESS TECHNOLOGY; SEMICONDUCTOR; VAPOR;

EID: 78751625321 PISSN: 02365731 EISSN: None Source Type: Journal
DOI: 10.1007/s10967-010-0746-7 Document Type: Article

Times cited : (39)

References (10)

1
- 34249987165
- Design and microfabrication of radioisotope micro battery based on MEMS
- Sun L, Yuan W, Qiao D (2006) Design and microfabrication of radioisotope micro battery based on MEMS. Microfabric Technol 3:32-35
- (2006) Microfabric Technol , vol.3 , pp. 32-35
- Sun, L.¹ Yuan, W.² Qiao, D.³

2
- 31344450225
- Demonstration of a 4H SiC betavoltaic cell
- DOI 10.1063/1.2166699, 033506
- MVS Chandrashekhar CI Thomas H Li MG Spencer A Lal 2006 Demonstration of a 4H SiC betavoltaic cell Appl Phys Lett 88 033506 10.1063/1.2166699 (Pubitemid 43136748)
- (2006) Applied Physics Letters , vol.88 , Issue.3 , pp. 1-3
- Chandrashekhar, M.V.S.¹ Thomas, C.I.² Li, H.³ Spencer, M.G.⁴ Lal, A.⁵

3
- 56349152251
- Demonstration of a 4H SiC betavoltaic nuclear battery based on Schottky barrier diode
- 1:CAS:528:DC%2BD1cXht12qs7nF 10.1088/0256-307X/25/10/076
- D-Y Qiao W-Z Yuan P Gao X-W Yao B Zang L Zhang H Guo H-J Zhang 2008 Demonstration of a 4H SiC betavoltaic nuclear battery based on Schottky barrier diode Chin Phys Lett 25 10 3798 3800 1:CAS:528:DC%2BD1cXht12qs7nF 10.1088/0256-307X/25/10/076
- (2008) Chin Phys Lett , vol.25 , Issue.10 , pp. 3798-3800
- Qiao, D.-Y.¹ Yuan, W.-Z.² Gao, P.³ Yao, X.-W.⁴ Zang, B.⁵ Zhang, L.⁶ Guo, H.⁷ Zhang, H.-J.⁸

4
- 32444434583
- Demonstration of a radiation resistant, high efficiency SiC betavoltaic
- DOI 10.1063/1.2172411
- CJ Eiting V Krishanmoorthy S Rodgers T George JD Robertson J Brockman 2006 Appl Phys Lett 88 064101 10.1063/1.2172411 (Pubitemid 43228559)
- (2006) Applied Physics Letters , vol.88 , Issue.6 , pp. 064101
- Eiting, C.J.¹ Krishnamoorthy, V.² Rodgers, S.³ George, T.⁴ Robertson, J.D.⁵ Brockman, J.⁶

5
- 23044451746
- The electron voltaic affects in silicon and selenium elements
- 1:CAS:528:DyaF2cXisl2itw%3D%3D 10.1088/0370-1328/78/5/330
- EW Billington 1961 The electron voltaic affects in silicon and selenium elements Proc Phys Soc 78 845 853 1:CAS:528:DyaF2cXisl2itw%3D%3D 10.1088/0370-1328/78/5/330
- (1961) Proc Phys Soc , vol.78 , pp. 845-853
- Billington, E.W.¹

6
- 78751617614
- 1 NDI press Beijing
- Lutz G (2004) Semiconductor radiation detectors, 1st edn. NDI press, Beijing, pp 102-103
- (2004) Semiconductor Radiation Detectors , pp. 102-103
- Lutz, G.¹

7
- 36448975277
- Silicon carbide for UV, alpha, beta and X-ray detectors: Results and perspectives
- DOI 10.1016/j.nima.2007.08.212, PII S0168900207019225, Proceedings of the 6th International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices RESMDD 2006
- F Moscatelli 2007 Silicon carbide for UV, alpha, beta and X-ray detectors: results and perspectives Nucl Instr Meth Phys Res 583 157 161 1:CAS:528:DC%2BD2sXhtlGjtLzM 10.1016/j.nima.2007.08.212 (Pubitemid 350166171)
- (2007) Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment , vol.583 , Issue.1 , pp. 157-161
- Moscatelli, F.¹

8
- 78751622499
- 1 Harbin Engineering University Press Harbin
- Liu Q, Jia B, Wan J (2004) Introduction of nuclear science, 1st edn. Harbin Engineering University Press, Harbin, p 33
- (2004) Introduction of Nuclear Science , pp. 33
- Liu, Q.¹ Jia, B.² Wan, J.³

9
- 78751636049
- Investigation of Ni-based ohmic contacts to N-type SiC
- Guo H, Zhang Y, Zhang Y, Zhang J, Gao J (2007) Investigation of Ni-based ohmic contacts to N-type SiC. Chin J Elect Dev 30(2):43-45
- (2007) Chin J Elect Dev , vol.30 , Issue.2 , pp. 43-45
- Guo, H.¹ Zhang, Y.² Zhang, Y.³ Zhang, J.⁴ Gao, J.⁵

10
- 78751640634
- PhD Thesis, Cornell University
- Chandrashekhar MVS (2007) Demonstration of a 4H SiC betavoltaic cell. PhD Thesis, Cornell University
- (2007) Demonstration of A 4H SiC Betavoltaic Cell
- Mvs, C.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.