Effect of Ge addition on the optical band gap and refractive index of thermally evaporated As2Se3 thin films

Advances in Materials Science and Engineering

Volumn 2008, Issue , 2008, Pages

  Sharma, Pankaj ^a   Katyal, S C ^a  

^a JAYPEE UNIVERSITY OF INFORMATION TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BASE PRESSURE; DENSITY OF STATE; GE ADDITION; REFRACTIVE INDEX INCREASE; SPECTRAL RANGE; THERMAL EVAPORATION TECHNIQUE; TRANSMISSION SPECTRUMS;

GERMANIUM; OPTICAL BAND GAPS; SEMICONDUCTING SELENIUM COMPOUNDS; THERMAL EVAPORATION; THIN FILMS;

REFRACTIVE INDEX;

EID: 78751562770     PISSN: 16878434     EISSN: 16878442     Source Type: Journal    
DOI: 10.1155/2008/826402     Document Type: Article

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