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Volumn 292, Issue 1-2, 1997, Pages 31-39

Silicide formation in cobalt/amorphous silicon, amorphous Co-Si and bias-induced Co-Si films

Author keywords

Cobalt; Crystallization; Phase transitions; Silicides

Indexed keywords

AMORPHOUS FILMS; CALCULATIONS; COBALT COMPOUNDS; CRYSTALLIZATION; DIFFERENTIAL SCANNING CALORIMETRY; EPITAXIAL GROWTH; ION BOMBARDMENT; IONS; PHASE TRANSITIONS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 0031553502     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08929-8     Document Type: Article
Times cited : (88)

References (36)
  • 17
    • 0017995885 scopus 로고
    • S.S. Lau et al., J. Appl. Phys., 49 (1) (1978) 4005.
    • (1978) J. Appl. Phys. , vol.49 , Issue.1 , pp. 4005
    • Lau, S.S.1
  • 22
    • 0000705530 scopus 로고
    • H. Miura et al., J. Appl. Phys., 70 (8) (1991) 4287.
    • (1991) J. Appl. Phys. , vol.70 , Issue.8 , pp. 4287
    • Miura, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.