Theory of time-resolved photo-luminescence and carrier lifetime measurements in GaAs/GaInP heterostructures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7614, Issue , 2010, Pages

  Rupper, G ^a   Kwong, N H ^a   Binder, R ^a  

^a The University of Arizona   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; CARRIER LIFETIME MEASUREMENTS; CONCEPTUAL SIMPLICITY; DENSITY PROFILE; EXCITED CARRIERS; GAAS; GAINP; HETEROSTRUCTURE INTERFACES; HETEROSTRUCTURES; LIFETIME MEASUREMENTS; N-DOPED; NON-RADIATIVE; NON-RADIATIVE RECOMBINATIONS; NONRADIATIVE DECAY PROCESS; OPTICAL EXCITATIONS; OPTICAL REFRIGERATION; SIMPLIFYING ASSUMPTIONS; SPATIAL DENSITIES; SPATIAL INHOMOGENEITIES; SPATIALLY RESOLVED; SURFACE LAYERS; THERMAL EQUILIBRIUMS; TIME-RESOLVED; UP-CONVERSION;

CAPILLARY TUBES; CARRIER LIFETIME; CRYSTALS; LUMINESCENCE; PHOSPHORUS; PHOTOEXCITATION; REFRIGERATION; SEMICONDUCTOR LASERS;

HETEROJUNCTIONS;

EID: 77951677605     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.846777     Document Type: Conference Paper

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