Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions

Journal of Applied Physics

Volumn 109, Issue 1, 2011, Pages

  Saini, Viney ^a   Li, Zhongrui ^a   Bourdo, Shawn ^a   Kunets, Vasyl P ^b   Trigwell, Steven ^c   Couraud, Arthur ^a,d   Rioux, Julien ^a,d   Boyer, Cyril ^a,d   Nteziyaremye, Valens ^a   Dervishi, Enkeleda ^a   Biris, Alexandru R ^e   Salamo, Gregory J ^b   Viswanathan, Tito ^a   Biris, Alexandru S ^a  

^a University of Arkansas   (United States)

^b UNIVERSITY OF ARKANSAS   (United States)

^c KENNEDY SPACE CENTER   (United States)

^d Ecole d'Ingenieurs du CESI EIA ^*  (France)

^e NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT OF ISOTOPIC AND MOLECULAR TECHNOLOGIES   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

BORON ATOM; BORON-DOPED; CARBON NANOTUBE FILMS; CHARGE COLLECTION; DEVICE FABRICATIONS; HIGH DENSITY; INK-JET PRINTING; N TYPE SILICON; OPTICAL TRANSMITTANCE SPECTRUM; PHOTOVOLTAIC DEVICES; SI SUBSTRATES; SINGLE-WALLED CARBON; THERMAL GRAVIMETRIC ANALYSIS; THERMAL-ANNEALING; UNIFORM FILMS;

BORON; CARBON FILMS; CARBON NANOTUBES; HETEROJUNCTIONS; PHOTOVOLTAIC EFFECTS; RAMAN SPECTROSCOPY; SILICON; SINGLE-WALLED CARBON NANOTUBES (SWCN); THERMOGRAVIMETRIC ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 78751506655     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3531112     Document Type: Article

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