Improving stability of photoluminescence of ZnSe thin films grown by molecular beam epitaxy by incorporating Cl dopant

Applied Physics Letters

Volumn 98, Issue 2, 2011, Pages

  Wang, J S ^a   Chen, W J ^a   Yang, C S ^b   Tsai, Y H ^a   Wang, H H ^a   Chen, R H ^a   Shen, J L ^a   Tsai, C D ^c  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b TATUNG UNIVERSITY   (Taiwan)

^c OPTOTECH Corporation   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CL-DOPED; EXCITONIC EMISSION; NONRADIATIVE CENTERS; PHOTON IRRADIATION; PL DEGRADATION; POWER DENSITIES; ROOM TEMPERATURE; THERMAL HEATING; ZNSE THIN FILMS;

CHLORINE; EPITAXIAL GROWTH; HEATING; IRRADIATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTOLUMINESCENCE; PHOTONS; THIN FILMS;

DOPING (ADDITIVES);

EID: 78751494181     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3541786     Document Type: Article

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