Vertical profile optimization for +400 GHz fMAX Si/SiGe:C HBTs

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2010, Pages 49-52

  Lacave, T ^a,b   Chevalier, P ^a   Campidelli, Y ^a   Buczko, M ^a   Depoyan, L ^a   Berthier, L ^a   Avenier, G ^a   Gaquiere C ^b   Chantre, A ^a  

^a STMICROELECTRONICS   (France)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

Heterojunction bipolar transistors (HBT); Nanotechnology; Silicon germanium (SiGe)

Indexed keywords

COLLECTOR DOPING; EMITTER DOPING; SI CAPPING LAYER; SI/SIGE; SILICON GERMANIUM (SIGE); SPIKE ANNEALING; VERTICAL PROFILE;

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; GERMANIUM; HETEROJUNCTIONS; NANOTECHNOLOGY; POLYSILICON; SILICON ALLOYS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 78651386690     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2010.5667965     Document Type: Conference Paper

References (5)

1. MAX", BCTM Proc., 2009, pp. 1-4
2. T > 400 GHz at Room Temperature", BCTM Proc., 2008, pp. 121-124
3. P. Chevalier et al, "230 GHz Self-Aligned SiGe:C HBT for Optical and Millimeter Wave Applications", IEEE J. Solid-State Circuits, vol. 40, no. 10, October 2005, pp.2025-2034
4. th ECS meeting
5. D. Lagarde et al, "Band to Band Tunneling in Vertically Scaled SiGe:C HBT's", IEEE Electron Device Letters, vol. 27, no. 4, April 2006, pp. 275-276