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Journal of Alloys and Compounds

Volumn 509, Issue 5, 2011, Pages 2360-2363

Nanostructural characteristics of oxide-cap GaN nanotips by iodine-gallium ions etching

(7) Hu, Zhan Shuo a Hung, Fei Yi a Chang, Shoou Jinn a Huang, Bohr Ran b Lin, Bo Cheng b Chen, Kuan Jen a Hsu, Wen I a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

Author keywords

Ag; Gallium nitride; Iodine gallium ions etching

Indexed keywords

AG; DIFFERENT SIZES; FIELD EMISSION PROPERTY; GALLIUM OXIDES; MASK PROCESS; NANOSTRUCTURAL CHARACTERISTICS; POLYCRYSTALLINE STRUCTURE; SILVER CLUSTER; SILVER MASK; TURN-ON FIELD;

ETCHING; FIELD EMISSION; GALLIUM NITRIDE; INDUSTRIAL CHEMICALS; IODINE; IONS; NANOTIPS; SILVER OXIDES;

GALLIUM ALLOYS;

EID: 78651363552 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2010.11.018 Document Type: Article

Times cited : (6)

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