Effects of annealing temperature on structure and opt-electric properties of ion-conducting LLTO thin films prepared by RF magnetron sputtering

Journal of Alloys and Compounds

Volumn 509, Issue 5, 2011, Pages 1910-1914

  Xiong, Yuli ^a   Tao, Haizheng ^a   Zhao, Jiang ^a   Cheng, Hao ^a   Zhao, Xiujian ^a  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Annealing temperature; Ion conducting; LLTO thin films; RF magnetron sputtering

Indexed keywords

AFM; ALL-SOLID-STATE; ANNEALED FILMS; ANNEALING TEMPERATURES; CRYSTAL PHASIS; ION-CONDUCTING; ITO/GLASS SUBSTRATES; LITHIUM LANTHANUM TITANATE; LLTO THIN FILMS; OPTICAL TRANSMITTANCE; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; SEM; TIO;

AMORPHOUS FILMS; ANNEALING; CONDUCTIVE FILMS; ELECTRIC PROPERTIES; IONS; LANTHANUM; LITHIUM; MAGNETRON SPUTTERING; SOLID STATE DEVICES; THIN FILMS; X RAY DIFFRACTION;

FILM PREPARATION;

EID: 78651356502     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.10.086     Document Type: Article

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