Low temperature epitaxial growth of Ge quantum dot on Si (100) - (2×1) by femtosecond laser excitation

Applied Physics Letters

Volumn 98, Issue 1, 2011, Pages

  Er, Ali Oguz ^a   Ren, Wei ^b   Elsayed Ali, Hani E ^b  

^a OLD DOMINION UNIVERSITY   (United States)

^b Old Dominion University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC MECHANISMS; FEMTOSECOND LASER EXCITATION; FEMTOSECOND PULSED-LASER DEPOSITION; GE QUANTUM DOT; GROWTH MODES; LOW TEMPERATURE EPITAXIAL GROWTH; LOW TEMPERATURE EPITAXIES; SI(1 0 0);

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; GERMANIUM; OPTICAL WAVEGUIDES; PULSED LASER DEPOSITION; PULSED LASERS; QUANTUM DOT LASERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; ULTRAFAST LASERS; ULTRASHORT PULSES;

LASER EXCITATION;

EID: 78651313566     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3537813     Document Type: Article

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