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Volumn 101, Issue 6, 1997, Pages 429-432

Laser-induced desorption of adatoms on Si(100)-2 × 1 surface

Author keywords

A. semiconductors; A. surfaces and interfaces; B. laser processing; D. electron phonon interactions

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; DEPOSITION; INTERFACES (MATERIALS); LASER BEAM EFFECTS; SURFACE STRUCTURE;

EID: 0031075551     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(96)00646-1     Document Type: Article
Times cited : (12)

References (10)
  • 7
    • 30244449773 scopus 로고    scopus 로고
    • note
    • 0 desorption from Si(111)-7 × 7 surface have shown that the lifetime of the excited state responsible for the desorption is about 40 ps, which is much shorter than the temporal width of laser pulses used in this study (Tanimura, K., Iwata, K. and Kanasaki, J., unpublished). Although the lifetime has not yet been determined for Si(100) surface, we assume here that it is of the same order of magnitude.
  • 9


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.