Elimination of interface states of Co2 MnSi/MgO/ Co2 MnSi magnetic tunneling junction by inserting an Al atomic layer

Applied Physics Letters

Volumn 98, Issue 1, 2011, Pages

  Yu, H L ^a,b   Yang, G W ^a  

^a SUN YAT SEN UNIVERSITY   (China)

^b CHANGSHU INSTITUTE OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; HALF-METALLIC; HEUSLER ALLOYS; INTERFACE BEHAVIOR; INTERFACE STATE; INTERFACIAL ATOMS; MAGNETIC TUNNELING JUNCTIONS;

ATOMS; MANGANESE COMPOUNDS; TRANSITION METALS;

MAGNETIC DEVICES;

EID: 78651281596     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3540646     Document Type: Article

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