Critical role of interface states for spin-dependent tunneling in half-metallic Co2MnSi-based magnetic tunnel junctions investigated by tunneling spectroscopy

Applied Physics Letters

Volumn 94, Issue 9, 2009, Pages

  Ishikawa, Takayuki ^a   Itabashi, Naoki ^a   Taira, Tomoyuki ^a   Matsuda, Ken Ichi ^a   Uemura, Tetsuya ^a   Yamamoto, Masafumi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRODES; ELECTRON TUNNELING; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MANGANESE COMPOUNDS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR JUNCTIONS; SPIN DYNAMICS; STRONTIUM COMPOUNDS; TUNNELS; WAVEGUIDE JUNCTIONS;

DIFFERENTIAL CONDUCTANCES; HALF-METALLIC; HALF-METALLIC ELECTRODES; INTERFACE STATE; MAGNETIC TUNNEL JUNCTIONS; ROOM TEMPERATURES; SPIN-DEPENDENT TUNNELING; TUNNEL BARRIERS; TUNNEL MAGNETORESISTANCES; TUNNELING MODELS; TUNNELING SPECTROSCOPIES; TUNNELING SPECTRUM;

TUNNEL JUNCTIONS;

EID: 62149151606     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3083560     Document Type: Article

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