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Volumn 314, Issue 1, 2011, Pages 119-122
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Growth of Zn3As2 on GaAs by liquid phase epitaxy and their characterization
a,b
a
ANNA UNIVERSITY
(India)
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Author keywords
A1. X ray diffraction; A3. Liquid phase epitaxy; B1. Zinc compounds; B2. Semiconducting materials
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Indexed keywords
ABSORPTION EDGES;
AS-GROWN;
B1. ZINC COMPOUNDS;
BAND GAPS;
CRYSTALLINE LAYERS;
ENERGY DISPERSIVE X-RAY;
GAAS;
GAAS(1 0 0);
GROWTH MELTS;
HALL MEASUREMENTS;
INFRARED OPTICAL ABSORPTION;
LIQUID PHASE;
MOLE FRACTION;
PEAK INTENSITY;
SEM;
SEMICONDUCTING MATERIALS;
ABSORPTION;
ABSORPTION SPECTROSCOPY;
CARRIER CONCENTRATION;
CARRIER MOBILITY;
DIFFRACTION;
EPILAYERS;
EPITAXIAL GROWTH;
GALLIUM ALLOYS;
GALLIUM ARSENIDE;
LIQUID PHASE EPITAXY;
LIQUIDS;
PHOSPHORUS;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR GROWTH;
X RAY DIFFRACTION;
X RAYS;
ZINC COMPOUNDS;
ZINC;
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EID: 78651103849
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.11.126 Document Type: Article |
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Times cited : (3)
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References (12)
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