The growth of Zn3As2 on InP by atmospheric pressure MOVPE

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 813-816

  Scriven, G J ^a   Leitch, A W R ^a   Neethling, J H ^a   Kozyrkov, V V ^a   Watters, V J ^a  

^a NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HALL EFFECT; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH;

ZINC ARSENIDE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030647522     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00558-1     Document Type: Article

References (7)

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