Crack formation in Zn3As2 epilayers grown by MOVPE

Journal of Crystal Growth

Volumn 216, Issue 1, 2000, Pages 235-244

  Engelbrecht, J A A ^a   Scriven, G J ^a   Neethling, J H ^a   Wagener, M C ^a  

^a NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

CRACK INITIATION; CRYSTAL LATTICES; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NUCLEATION; SCANNING ELECTRON MICROSCOPY;

ZINC ARSENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0033723734     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00453-X     Document Type: Article

References (40)

1. Heike W. Z. Anorg. Allg. Chem. 118:1921;264.
2. Pawlikowski J.M., Becla P. Acta. Phys. Polon. A. 47:1975;121.
3. Chelluri B., Chang T.Y., Ourmazd A., Dayem A.H., Zyskind J.L., Srivastava A. Appl. Phys. Lett. 49:1986;1665.
4. Silvey G.A. J. Appl. Phys. 29:1958;226.
5. Shevchenko V.Ya., Marenkin S.F., Ponomarev V.F. Izv. Akad. Nauk SSSR, Neorg. Mater. 13:1977;1898.
6. Marenkin S.F., Zhalilov N.S., Mudryi A.V., Patuk A.I., Shakin I.A. Izv. Akad. Nauk SSSR, Neorg. Mater. 28:1992;2045.
7. Sujak-Cyrul B., Kolodka B., Misiewicz J., Pawlikowski J.M. J. Phys. Chem. Solids. 43:1982;1045.
8. Szatkowski J., Sierañski K. J. Phys. Chem. Solids. 51:1990;249.
9. Silvey G.A., Lyons V.J., Silvestri V.J. J. Electrochem. Soc. 108:1961;653.
10. T.A. Zyubina, Ya.A. Ugai, Sb.Tr. Poluprov. Mater., Prib. Ikh. Primen. (1968) 37.
11. Harbeke G., Lautz G. Abhandl. Braunschw. Wiss. Gesell. 7:1955;36.
12. Pawlikowski J.M. Proc. Nat. Anal. Instrum. Symp. 1:1969;33.
13. Pawlikowski J.M., Borkowska T. Opt. Appl. 4:1974;31.
14. Kotosonov N.V., Ugai Ya.A., Korchagin B.D., Zyubina T.A., Vlasov B.I. Tr. Voranezh. Gos. Univ. 76:1969;182.
15. Zhalilov N.S., Sanygin V.P., Uriev G.S., Marenkin S.F., Lazarev V.B. J. Inorg. Chem. 37:1992;1950.
16. Chelluri B., Chang T.Y., Ourmazd A., Dayem A.H., Zyskind J.L., Srivastava A. J. Crystal Growth. 81:1987;530.
17. Scriven G.J., Leitch A.W.R., Neethling J.H., Kozyrkov V.V., Watters V.J. J. Crystal Growth. 170:1997;813.
18. von Stackelberg M., Paulus R. Z. Physikal. Chem. 28:1935;427.
19. Pawlikowski J.M. Prace IFT Pol. Wrocl. 1:1969;33.
20. Weglowski S., Lukaszewicz K. Bull. Akad. Pol. Sci., Ser. Sci. Chim. 16:1968;177.
21. Pietraszko A., Lukaszewicz K. Bull. Akad. Pol. Sci., Ser. Sci. Chim. 24:1976;459.
22. Engelbrecht J.A.A., Wagener M.C., Scriven G.J. Proc. Microsc. Soc. Southern Afr. 28:1998;21.
23. Matthews J.W., Blakeslee A.E. J. Crystal Growth. 27:1974;118.
24. Frank F.C., van der Merwe J.H. Proc. Roy. Soc. (London) A. 198:1949;216.
25. Matthews J.W., Klokholm E. Mater. Res. Bull. 7:1972;213.
26. J.H. Neethling, G. Scriven, T. Krekels, J. Mater. Sci., 1999, submitted for publication.
27. G. Scriven, J.H. Neethling, T. Krekels, Thin Solid Films, 1999, submitted for publication.
28. Sierañski K., Szatkowski J., Misiewicz J. Phys. Rev. B. 50:1994;7331.
29. Izotov A.D., Sanygin V.P., Ponomarev V.I. Sov. Phys. -Crystalogr. 23:1978;427.
30. Brantley W.A. J. Appl. Phys. 44:1973;534.
31. Pietraszko A., Lukaszewicz K. Phys. Stat. Sol. A. 18:1973;723.
32. H. Baker, ASM Handbook, Vol. 3, Alloy Phase Diagrams, ASM International, 1992, p. 2.65.
33. Hwang D.M., Schwarz S.A., Mei P., Bhat R., Venkatesan T., Nazar L., Schwarz C.L. Appl. Phys. Lett. 54:1989;1160.
34. Kato Y., Kuritu S. J. Appl. Phys. 62:1987;3733.
35. S. Adachi, Physical Properties of III-V Semiconductor Compounds InP, InAs, GaAs, GaP, InGaAs, and InGaAsP, Wiley, New York, 1992, p. 52.
36. S.M. Sze, Physics of Semiconductor Devices, Wiley, New York, 1981, p. 848.
37. Madelung O. Semiconductors-Basic Data. 1996;127 Springer, Berlin.
38. V. Alberts, Ph.D. Thesis, University of Port Elizabeth, South Africa, 1993.
39. A. Kelly, Strong Solids, Oxford University Press, Oxford, 1966, p. 3.
40. Wright A.C., Ng T.-Lin, Maung N. Philos. Mag. A. 79:1999;2691.