Effect of process parameters on TSV formation using deep reactive ion etching

Journal of Korean Institute of Metals and Materials

Volumn 48, Issue 11, 2010, Pages 1028-1034

  Kim, Kwang Seok ^a   Lee, Young Chul ^a   Ahn, Jee Hyuk ^a   Song, Jun Yeob ^b   Yoo, Choong D ^c   Jung, Seung Boo ^a  

^a Sungkyunkwan University   (South Korea)

^b Korea Institute of Machine and Materials   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Bosch process; DRIE; ICP; TSV; Via profile

Indexed keywords

BOSCH PROCESS; DRIE; ICP; TSV; VIA PROFILE;

FLOW OF GASES; FLUORINE; IONS; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

REACTIVE ION ETCHING;

EID: 78650887543     PISSN: 17388228     EISSN: None     Source Type: Journal    
DOI: 10.3365/KJMM.2010.48.11.1028     Document Type: Article

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