Boron impurity at the Si/SiO2 interface in SOI wafers and consequences for piezoresistive MEMS devices

Journal of Micromechanics and Microengineering

Volumn 19, Issue 1, 2009, Pages

  Nafari, A ^a,b   Karlen, D ^a,b   Rusu, C ^c   Svensson, K ^d   Enoksson, P ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b Nanofactory Instruments AB   (Sweden)

^c Imego AB The Institute of Micro and Nanotechnology   (Sweden)

^d KARLSTAD UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; BORON COMPOUNDS; MEMS; MICROELECTROMECHANICAL DEVICES; SECONDARY ION MASS SPECTROMETRY;

BURIED OXIDES; DESIGN RULES; ELECTRICAL MEASUREMENTS; ELECTRICAL PERFORMANCE; MEMS DEVICES; MEMS FABRICATIONS; P-N JUNCTIONS; PIEZO-RESISTIVE; PIEZO-RESISTORS; PIEZORESISTIVE DEVICES; SOI WAFERS;

SILICON WAFERS;

EID: 62649142411     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/19/1/015034     Document Type: Article

References (9)

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