Effect of double doping in lead zirconate titanate (PZT) lattices by sol-gel technique for MEMS applications

Integrated Ferroelectrics

Volumn 121, Issue 1, 2010, Pages 65-76

  Pandey, S K ^a   Thakur, O P ^a   Bhattacharya, D K ^a   Prakash, Chandra ^b   Chatterjee, Ratnamala ^c  

^a SOLID STATE PHYSICS LABORATORY   (India)

^b DRDO   (India)

^c INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

double doping; optical; PZT; samarium; thin films

Indexed keywords

ATOMIC FORCE MICROSCOPES; BAND GAPS; CATION SUBSTITUTIONS; DIELECTRIC CONSTANTS; DIELECTRIC VALUES; DIFFRACTOGRAMS; DOUBLE DOPING; LEAD ZIRCONATE TITANATE; LOSS TANGENT; MEMS APPLICATIONS; OHMIC BEHAVIOUR; OPTICAL; PHASE TRANSITION TEMPERATURES; PZT; SINGLE PHASE; SM SUBSTITUTION; SOL-GEL TECHNIQUE; UV-VIS-NIR SPECTROPHOTOMETERS; XRD;

CERAMIC MATERIALS; ENERGY GAP; FERROELECTRIC FILMS; GELS; LEAD; OPTICAL BAND GAPS; PHASE TRANSITIONS; SAMARIUM; SEMICONDUCTING LEAD COMPOUNDS; SOLS; THIN FILMS; ZIRCONIUM;

OPTICAL FILMS;

EID: 78650876760     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584587.2010.504132     Document Type: Conference Paper

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