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Volumn 97, Issue 26, 2010, Pages

Different longitudinal optical-transverse optical mode amplification in tip enhanced Raman spectroscopy of GaAs(001)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM DEFLECTION; CRYSTALLOGRAPHIC AXIS; EXCITATION FIELD; FAR-FIELD; GAAS(001); GAAS(1 0 0); LONGITUDINAL OPTICAL MODES; LONGITUDINAL OPTICAL-TRANSVERSE OPTICAL MODES; NEAR-FIELD; SELECTION RULES; TIP-ENHANCED RAMAN SPECTROSCOPY; TIP-INDUCED; TRANSVERSE OPTICAL MODES;

EID: 78650865751     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3532841     Document Type: Article
Times cited : (22)

References (25)
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    • note
    • In Si(100) the energy separation between the one-phonon mode at 520.5 cm-1 and the two-phonons band at 980 cm-1 is one order of magnitude larger (12 and 28 nm, respectively, for 515 and 785 nm laser excitation).
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    • See supplementary material at E-APPLAB-97-089052 for the plot of the ILO / ITO ratio vs θ (Fig. S1) and for a table summarizing the results (Table I).
    • See supplementary material at http://dx.doi.org/10.1063/1.3532841 E-APPLAB-97-089052 for the plot of the ILO / ITO ratio vs θ (Fig. S1) and for a table summarizing the results (Table I).


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