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Volumn 133, Issue 23, 2010, Pages

Electronic structure and the glass transition in pnictide and chalcogenide semiconductor alloys. I. the formation of the pp-network

Author keywords

[No Author keywords available]

Indexed keywords

CHALCOGENIDE SEMICONDUCTORS; CHALCOGENS; COVALENTLY BONDED; HIGH SYMMETRY; INTRINSIC ELECTRONICS; MOLECULAR LEVELS; OCTAHEDRAL COORDINATION; ORBITALS; PNICTIDES; STRAIN REGION; STRUCTURAL EXCITATION; STRUCTURAL MODELS; WEAK BOND; ATOMIC MOTION; BONDING PATTERNS; COORDINATION DEFECTS; ELECTRONIC EXCITATION; HOMOPOLAR BONDS; LIMITING CASE; PARENT STRUCTURE; QUENCHED MELTS; SIMPLE-CUBIC LATTICES; TRANSITION STATE;

EID: 78650699612     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3511707     Document Type: Article
Times cited : (32)

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    • See supplementary material at E-JCPSA6-133-033042 for an illustration of voids in crystalline As 2 Se 3, image of Br crystal, and angular maps of the strength of the pp-interaction in selected substances.
    • See supplementary material at http://dx.doi.org/10.1063/1.3511707 E-JCPSA6-133-033042 for an illustration of voids in crystalline As 2 Se 3, image of Br crystal, and angular maps of the strength of the pp-interaction in selected substances.


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