Effect of Sb on the growth and photoelectrochemical response of AgIn5S8 film electrodes created by solution growth technique

Chemical Engineering Science

Volumn 65, Issue 1, 2010, Pages 74-79

  Cheng, Kong Wei ^a   Huang, Chao Ming ^b   Pan, Guan Ting ^c   Chang, Wen Sheng ^d   Lee, Tai Chou ^e   Yang, Thomas C K ^c  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b KUN SHAN UNIVERSITY   (Taiwan)

^c NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^e NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

Author keywords

Catalysis; Electrochemistry; Electronic materials; Energy; Films; Photochemistry

Indexed keywords

CONDUCTION TYPE; DEPOSITION PARAMETERS; ELECTRON POTENTIAL; ELECTRONIC MATERIALS; ENERGY; ENERGY BANDGAPS; EXTERNAL POTENTIAL; FILM ELECTRODES; FLAT BAND POTENTIAL; INDIUM TIN OXIDE; MOLAR RATIO; P TYPE SEMICONDUCTOR; PHOTOCATALYST FILM; PHOTOCURRENT DENSITY; PHOTOELECTROCHEMICAL PROPERTIES; PHOTOELECTROCHEMICAL RESPONSE; POLYCRYSTALLINE; POLYCRYSTALLINE FILM; PRECURSOR SOLUTIONS; REACTION SOLUTIONS; S-SYSTEMS; SB-DOPED; SOLUTION GROWTH TECHNIQUE; XE LAMP;

CATALYSIS; CHEMICAL VAPOR DEPOSITION; DIFFRACTION; ELECTROCHEMISTRY; HOLOGRAPHIC INTERFEROMETRY; OPTICAL PROPERTIES; OXIDE FILMS; PHOTOCATALYSIS; SEMICONDUCTOR GROWTH; SILVER; TIN; XENON;

FILM GROWTH;

EID: 72149087179     PISSN: 00092509     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ces.2009.02.002     Document Type: Article

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