The influence of solution-precursors on optical properties of In2S3 films deposited by successive ionic layer adsorption and reaction

Semiconductors

Volumn 44, Issue 13, 2010, Pages 1649-1653

  Gavrilov, S A ^a   Zheleznyakova, A V ^a   Redichev, E N ^a   Popenko, N I ^a  

^a NATIONAL RESEARCH UNIVERSITY OF ELECTRONIC TECHNOLOGY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 78650609241     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782610130063     Document Type: Article

References (12)

1. D. A. Ageev, V. B. Aleskovskii, R. A. Bisengaliev, et al., Fiz. Tverd. Tela 40, 820 (1998) [Phys. Solid State 40, 754 (1998)].
2. G. Korotcenkov, V. Macsanov, V. Tolstoy, et al., Sens. Actuat. B 96, 602 (2003).
3. Y. F. Nicolau and J. C. Menard, J. Cryst. Growth 92, 128 (1998).
4. Kaiser, K. Ernst, Ch.-H. Fischer, et al., Solar Energy Mater. Solar Cells 67, 89 (2001).
5. I. Oja, A. Belaidi, L. Dloczik, et al., Semicond. Sci. Technol. 21, 520 (2006).
6. S. Gavrilov, I. Oja, B. Lim, et al., Phys. Status Solidi A 203, 1024 (2006).
7. G. Larramona, C. Chone, A. Jacob, et al., Chem. Mater. 18, 1688 (2006).
8. R. Tena-Zaera, M. A. Ryan, A. Katty, et al., C. R. Chimie 9, 717 (2006).
9. S. Gavrilov, Th. Dittrich, B. Lim, et al., Thin Solid Films 516, 7051 (2008).
10. M. Sasagawa and Y. Nosaka, Phys. Chem. Chem. Phys. 3, 3371 (2001).
11. N. Barreau, S. Marsillac, J. C. Bernede, and L. Assmann, J. Appl. Phys. 93, 5456 (2003).
12. Thermal Properties of Individual Substances, Ed. by V. P. Glushko (VINITI, Moscow, 1971, 1972), vols. 5-6 [in Russian].