Photoelectrical properties of In(OH)xSy/PbS(O) structures deposited by SILAR on TiO2

Semiconductor Science and Technology

Volumn 21, Issue 4, 2006, Pages 520-526

  Oja, I ^a,b   Belaidi, A ^a   Dloczik, L ^a   Lux Steiner, M Ch ^a   Dittrich, Th ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b TALLINN UNIVERSITY OF TECHNOLOGY   (Estonia)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; OHMIC CONTACTS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM; SOLAR CELLS; TITANIUM OXIDES;

KELVIN PROBE; PHOTOELECTRICAL PROPERTIES; PHOTOVOLTAGE; SUCCESSIVE ION LAYER ADSORPTION REACTION (SILAR);

PHOTOELECTRICITY;

EID: 33644970760     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/4/018     Document Type: Article

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