Piezo-Hall characterization of integrated Hall sensors using a four-point bending bridge

Procedia Engineering

Volumn 5, Issue , 2010, Pages 1376-1379

  Herrmann, M ^a   Ruther, P ^a   Paul, O ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

Author keywords

Four point bending; Magnetic sensor; Piezo Hall coefficient

Indexed keywords

HALL EFFECT DEVICES; HALL EFFECT TRANSDUCERS; MAGNETIC FIELDS; MAGNETIC SENSORS; ROAD CONSTRUCTION;

FOUR POINT BENDING; HALL COEFFICIENT; IN-PLANE STRESS; MAGNETIC SENSITIVITY; MEASUREMENTS OF; SOURCE-DRAIN CONTACTS; STRESS-DEPENDENT; VERTICAL MAGNETIC FIELDS;

MAGNETISM;

EID: 78650586435     PISSN: None     EISSN: 18777058     Source Type: Conference Proceeding    
DOI: 10.1016/j.proeng.2010.09.371     Document Type: Conference Paper

References (5)

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3. Richter J, Arnoldus MB, Hansen O, Thomsen EV. Four point bending setup for characterization of semiconductor piezoresistance. Rev.Sci. Instrum. 2008; 79: 044703.
4. Bartholomeyczik J, Brugger S, Ruther P, Paul O. Multidimensional CMOS In-Plane Stress Sensor. IEEE Sens. J. 2005; vol.5 no.5: pp. 872-82.
5. Steiner R, Maier C, Mayer M, Bellekom S, Baltes H. Influence of Mechanical Stress on the Offset Voltage of Hall Devices Operated with Spinning Current Method. J. Microelectromech. Syst. 1999; vol.8 no.4: pp.466-72.