Investigation of structural and optoelectronic properties of BaThO 3

Optical Materials

Volumn 33, Issue 3, 2011, Pages 553-557

  Murtaza, G ^a   Ahmad, Iftikhar ^a   Amin, B ^a   Afaq, A ^b   Maqbool, M ^c   Maqssod, J ^a   Khan, I ^a   Zahid, M ^a  

^a HAZARA UNIVERSITY   (Pakistan)

^b UNIVERSITY OF THE PUNJAB   (Pakistan)

^c BALL STATE UNIVERSITY   (United States)

Author keywords

FP LAPW; High frequency operating material; Oxide perovskite; Wide band gap

Indexed keywords

ENERGY GAP; OPTOELECTRONIC DEVICES; PEROVSKITE; THORIUM COMPOUNDS;

CHARACTERISTIC PEAKS; CONDUCTION-BAND STATE; FP-LAPW; FULL POTENTIAL LINEARIZED AUGMENTED PLANE WAVE METHOD; HIGH FREQUENCY HF; OPTOELECTRONIC PROPERTIES; OXIDE PEROVSKITE; WIDE BAND GAP;

BARIUM COMPOUNDS;

EID: 78650561382     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2010.10.052     Document Type: Article

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