Epitaxial growth of Si:C alloys: Process development and challenges

ECS Transactions

Volumn 28, Issue 1, 2010, Pages 63-71

  Dube, A ^a   Chakravarti, A ^a   Takalkar, R ^a   Li, J ^a   Yang, F ^b   Madan, A ^a   Zhu, Z ^a   Loesing, R ^a   Murphy, R ^a   Adam, T N ^a   Black, L R ^b   Holt, J R ^a   Harley, E C T ^a   Stoker, M W ^a   Schepis, D J ^a   Chen, X ^a  

^a IBM   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; TENSILE STRAIN;

CHANNEL STRAIN; DOWNSTREAM-PROCESSING; EPITAXIALLY GROWN; PHOSPHORUS-DOPED; PROCESS DEVELOPMENT; SILICON CARBON; SOURCE/DRAIN REGIONS; UNIAXIAL TENSILE STRAIN;

SILICON ALLOYS;

EID: 78650544080     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3375589     Document Type: Conference Paper

References (11)

1. S. Narasimha et al., IEDM Tech. Digest 2006, p. 689.
2. A. Wei et al., ECS Trans., Vol. 3, No. 7, p. 719 (2006).
3. T. Ghani et al., IEDM Tech. Digest 2003, p. 978.
4. K-W Ang et al., IEDM Tech. Digest 2005, p. 503.
5. Y. Liu et al., Symposium on VLSI Tech. 2007, p. 44.
6. P. Grudowski, Symposium on VLSI Tech. 2008, p. 172.
7. F. Yang, et al., IEDM Tech. Digest 20008, p. 51.
8. S.S. Iyer et al., Appl. Phys. Lett. 60, 356 (1992).
9. H. J. Osten et al., Semicond. Sci. Technol. 11, 1678 (1996).
10. Y. Kim et al., ECS Trans., Vol. 3, No. 7, p. 467 (2006).
11. M. Bauer et al., Mater. Res. Soc. Symp. Proc., Vol. 864, p. E.4.30.1 (2005).