First-principles calculations of intrinsic defects in the p-type semiconductor CuAlO2

Canadian Journal of Physics

Volumn 88, Issue 12, 2010, Pages 927-932

  Huang, Dan ^a,b   Pan, Yuanming ^a  

^a UNIVERSITY OF SASKATCHEWAN   (Canada)

^b HUNAN UNIVERSITY OF ARTS AND SCIENCE   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT FORMATION ENERGIES; FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; IMAGE CHARGES; INTRINSIC DEFECTS; P TYPE SEMICONDUCTOR; P-TYPE; P-TYPE CONDUCTIVITY; SUBSTITUTIONAL CU; SUPERCELL APPROACH; TRANSITION LEVEL;

DEFECTS;

ALUMINUM;

EID: 78650509151     PISSN: 00084204     EISSN: None     Source Type: Journal    
DOI: 10.1139/P10-095     Document Type: Article

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