Analysis of current - voltage - temperature characteristics of in and Cu contacts on n-type MoSe2 single crystals

Crystal Research and Technology

Volumn 46, Issue 1, 2011, Pages 61-64

  Sumesh, C K ^a   Patel, K D ^b   Pathak, V M ^b   Srivastav, R ^b  

^a CHAROTAR UNIVERSITY OF SCIENCE AND TECHNOLOGY   (India)

^b SARDAR PATEL UNIVERSITY   (India)

Author keywords

current voltage characteristics; metal semiconductor contact; ohmic contact; Schottky barrier diode

Indexed keywords

BARRIER HEIGHTS; CU CONTACT; CURRENT VOLTAGE; IDEALITY FACTORS; INHOMOGENEITIES; IV CHARACTERISTICS; LOW TEMPERATURES; METAL-SEMICONDUCTOR CONTACT; OHMIC BEHAVIOR; RECTIFICATION RATIO; ROOM TEMPERATURE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY DIODES; SCHOTTKY JUNCTIONS; TEMPERATURE CHARACTERISTIC; TEMPERATURE RANGE; ZERO-BIAS;

ELECTRIC CONTACTORS; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SINGLE CRYSTALS; THERMIONIC EMISSION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 78650491525     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.201000553     Document Type: Article

References (24)

1. J. Pouzet, and, J. C. Bernede, Mat. Chem. Phys. 36, 304 (1994.
2. J. M. Huang, and, D. F. Kelley, Chem. Mater. 12, 2825 (2000).
3. R. Harpeness, A. Gedanken, A. M. Weissb, and, M. A. Slifkin, J. Mater. Chem. 13, 2603 (2003).
4. S. R. Cohen, and, L. Rapoport, Thin Solid Films 324, 190 (1998).
5. A. Hussain, and, S. Auluck, Phys. Rev. B 7, 155114 (2005).
6. Th. Boker, and, R. Severin, Phys. Rev. B 64, 235305 (2001).
7. S. Sugai, and, T. Ueda, Phys. Rev. B 26, 6554 (1990).
8. C. K. Sumesh, K. D. Patel, V. M. Pathak, and, R. Srivastava, J. Ovonic Res. 4, 61 (2008).
9. M. K. Agarwal, P. D. Patel, and, S. K. Gupta, J. Cryst. Growth 129, 559 (1993).
10. Ying-Sheng Huang, Chin. J. Phys. 22, 43 (1984).
11. E. H. Rhoderick, and, R.H. Williams, Metal-Semiconductor Contacts (Clarendon Press, Oxford, 1988), p. 155.
12. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), p. 153.
13. D. Donoval, D. Vladimir, and, L. Marek, Solid State Electronics 42, 235 (1998).
14. C. K. Sumesh, K. D. Patel, V. M. Pathak, and, R. Srivastava, Chalcogen. Lett. 5, 177 (2008).
15. T. Shimada, S. Fumio, Ohuchi, and, B. A. Parkinson, Jpn. J. Appl. Phys. 33, 2696 (1994).
16. A. Piotrowska, A. Guivarch, and, G. Peolous, Solid State Electron. 26, 179 (1983).
17. S. Y. Zhu, R. L. Van Meirhaeghe, S. Forment, G. P. Ru, X. P. Qu, and, B. Z. Li, Solid State Electron. 48, 1205 (2004).
18. J. H. Werner, and, H. H. Guttler, J. Appl. Phys. 69, 1522 (1991).
19. A. Gumus, A. Turut, and, A. Yalcin, J. Appl. Phys. 91, 245 (2002).
20. Y. P. Sog, R. L. Van Meirhaeghe, W. H. Laflere, and, F. Cardon, Solid State Electron 29, 633 (1986).
21. J. P. Sullivan, R. T. Tung, M. R. Pinto, and, W. R. Graham, J. Appl. Phys. 70, 7403 (1991).
22. Y. G. Chen, M. Ogura, and, H. Okushi, J. Appl. Phys. Lett. 82, 4367 (2003).
23. S. Karata, S. Altindal, A. Turut, and, A. Ozmen, Appl. Surf. Sci. 217, 250 (2003).
24. J. L. Freeouf, T. Jackon, S. Z. Laux, and, J. M. Woodall, Appl. Phys. Lett. 40, 634 (1982).