Microstructural, optical and electrical properties of GeO2 thin films prepared by sol-gel method

Crystal Research and Technology

Volumn 46, Issue 1, 2011, Pages 65-68

  Hsu, Cheng Hsing ^a   He, Yi Da ^a   Yang, Shu Fong ^a  

^a NATIONAL UNITED UNIVERSITY   (Taiwan)

Author keywords

electrical properties; GeO2 thin film; optical properties; sol gel method

Indexed keywords

AMBIENT AIR; ANNEALING TEMPERATURES; ANNEALING TREATMENTS; ATOMIC FORCE MICROSCOPES; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL FIELD; ELECTRICAL PROPERTY; GEO2 THIN FILM; GRAIN SIZE; HIGH TRANSPARENCY; ITO/GLASS SUBSTRATES; MICRO-STRUCTURAL; MORPHOLOGICAL CHARACTERISTIC; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL TRANSMITTANCE; OPTICAL TRANSMITTANCE SPECTRUM; SOL-GEL METHOD; SOL-GEL METHODS; SUBSTRATE SURFACE; TREATMENT CONDITIONS; UV-VISIBLE SPECTROPHOTOMETER; VISIBLE REGION;

ANNEALING; ELECTRIC PROPERTIES; FILM PREPARATION; GELS; OPACITY; SOL-GEL PROCESS; SOL-GELS; SOLS; STRUCTURAL ANALYSIS; SURFACE STRUCTURE; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

OPTICAL FILMS;

EID: 78650473253     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.201000517     Document Type: Article

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