Factors Affecting the Growth of SiC Nano-whiskers

Journal of Materials Science and Technology

Volumn 26, Issue 11, 2010, Pages 1041-1046

  Chen, Y F ^a   Liu, X Z ^a   Deng, X W ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Nano whisker; SiC; Vapor liquid solid

Indexed keywords

COMPOUND SEMICONDUCTORS; GROWTH CONDITIONS; GROWTH PRESSURE; HIGH TEMPERATURE; HIGH-POWER; RADIATION CONDITION; SEMICONDUCTOR ELECTRONIC DEVICES; SIC; SIC THIN FILMS; VAPOR-LIQUID-SOLID; VAPOR-LIQUID-SOLID MECHANISM; WIDE BAND GAP;

CATALYSTS; FILM GROWTH; LIQUIDS; NANOWHISKERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH; SILICON CARBIDE; VAPORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78650404881     PISSN: 10050302     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1005-0302(10)60172-7     Document Type: Article

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