Factors determining the diameter of silicon carbide whiskers prepared by chemical vapor deposition

Materials Chemistry and Physics

Volumn 56, Issue 3, 1998, Pages 256-261

  Leu, Ing Chi ^a   Lu, Yang Ming ^a,b   Hon, Min Hsiung ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHUNG HWA UNIVERSITY OF MEDICAL TECHNOLOGY   (Taiwan)

Author keywords

Chemical vapor deposition; Silicon carbides; Whiskers

Indexed keywords

AGENTS; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTAL WHISKERS; HYDROGEN; NUCLEATION; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS;

GAS MIXTURE; LIQUID FORMING AGENT; VAPOR LIQUID SOLID MECHANISM; VAPOR SOLID DEPOSITION;

SILICON CARBIDE;

EID: 0032180675     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(98)00189-8     Document Type: Article

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