Work function shifts, Schottky barrier height, and ionization potential determination of thin MgO films on Ag(001)

Applied Physics Letters

Volumn 97, Issue 23, 2010, Pages

  Jaouen, T ^a   Jzquel G ^a   Delhaye, G ^a   Lpine B ^a   Turban, P ^a   Schieffer, P ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNESIA; OXIDE FILMS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILVER COMPOUNDS; THIN FILMS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; WORK FUNCTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRONIC BAND STRUCTURE; EPITAXIALLY GROWN; EXPERIMENTAL VALUES; INDUCED POLARIZATION; MGO FILMS; MGO THIN FILMS; OXIDE THICKNESS; SCHOTTKY BARRIER HEIGHTS;

IONIZATION POTENTIAL;

EID: 78650386182     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3525159     Document Type: Article

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