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Volumn 1210, Issue , 2010, Pages 159-164
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Optical and physical characterization of Cu2-xSe thin films for real time spectroscopic ellipsometry on Cu(In,Ga)Se2-based photovoltaic devices
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Author keywords
[No Author keywords available]
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Indexed keywords
BINARY COMPOUNDS;
COPPER INDIUM GALLIUM DISELENIDE;
CU(IN , GA)SE;
DIELECTRIC FUNCTIONS;
EX SITU;
FLUXING AGENTS;
GROWTH PROCESS;
HIGH EFFICIENCY;
IN-SITU;
INDUSTRIAL SCALE;
MATERIAL FABRICATION;
OPTICAL MODELS;
PHOTOVOLTAIC DEVICES;
PHYSICAL CHARACTERIZATION;
REAL TIME;
REAL TIME SPECTROSCOPIC ELLIPSOMETRY;
REFLECTANCE MEASUREMENTS;
ROOM TEMPERATURE;
SEM MICROGRAPHS;
COPPER;
FABRICATION;
GALLIUM;
GRAIN BOUNDARIES;
GRAIN GROWTH;
GROWTH TEMPERATURE;
OPTICAL PROPERTIES;
OPTICAL SYSTEMS;
PHOTOVOLTAIC EFFECTS;
SEMICONDUCTING SELENIUM COMPOUNDS;
SPECTROSCOPIC ELLIPSOMETRY;
SURFACE ROUGHNESS;
FEEDBACK;
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EID: 78650380251
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (3)
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References (8)
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