Electronic structure and transport properties of hydrogenated graphene and graphene nanoribbons

New Journal of Physics

Volumn 12, Issue , 2010, Pages

  Choe, D H ^a   Bang, Junhyeok ^a   Chang, K J ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; C ATOMS; CHANNEL ENERGY; DEFECT LEVELS; DEGREE OF LOCALIZATION; EDGE STRUCTURES; EIGENSTATES; ENERGY RANGES; ENERGY STATE; FIRST-PRINCIPLES; GRAPHENE NANORIBBONS; HIGH ENERGY; LOCALIZATION LENGTH; LOW DOSE; LOW ENERGIES; LOW-ENERGY STATE; NANORIBBONS; NANOSCALE ELECTRONIC DEVICES; NEUTRALITY POINT; PARTICIPATION RATIOS; SAMPLE SIZES; TIGHT-BINDING CALCULATIONS;

ADSORBATES; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; HYDROCARBONS; HYDROGENATION; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; SEMICONDUCTOR INSULATOR BOUNDARIES; TRANSPORT PROPERTIES;

GRAPHENE;

EID: 78650146277     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/12/12/125005     Document Type: Article

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