Device characterization of (AgCu)(InGa)Se2 solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 325-329

  Shafarman, William ^a   Thompson, Christopher ^a   Boyle, Jonathan ^a   Hanket, Gregory ^a   Erslev, Peter ^b   Cohen, J David ^b  

^a UNIVERSITY OF DELAWARE   (United States)

^b UNIVERSITY OF OREGON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BASIC MECHANISM; CELL BEHAVIORS; CO-EVAPORATIONS; DEVICE CHARACTERIZATION; DEVICE EFFICIENCY; FILL FACTOR; GA CONTENT; INTERFACE RECOMBINATION; LIMITING PERFORMANCE; MELTING TEMPERATURES; SOLAR CELL EFFICIENCIES; WIDE BAND GAP;

ALLOYING; BEHAVIORAL RESEARCH; ENERGY GAP; GALLIUM; PHOTOVOLTAIC EFFECTS; SILVER; SODIUM; SOLAR CELLS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 78650143221     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5615949     Document Type: Conference Paper

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