Comparison of high temperature operation of silicon carbide MOSFETs and bipolar junction transistors

International Conference and Exhibition on High Temperature Electronics 2010, HiTEC 2010

Volumn , Issue , 2010, Pages 136-143

  Richmond, Jim ^a   Ryu, Sei Hyung ^a   Zhang, Qingchun ^a   Hull, Brett ^a   Das, Mrinal ^a   Burk, Albert ^a   Agarwal, Anant ^a   Palmour, John ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

BJT; MOSFET; Reliability; Silicon carbide; Transistor

Indexed keywords

BIPOLAR SWITCHING; BJT; HIGH TEMPERATURE; MOS-FET; OPERATIONAL TEMPERATURE; SILICON CARBIDE MOSFETS; SILICON CARBIDES (SIC); TEMPERATURE RANGE;

HIGH TEMPERATURE OPERATIONS; MOSFET DEVICES; POWER ELECTRONICS; RELIABILITY; SILICON CARBIDE; TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 78650123627     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. S.-H. Ryu, S. Krishnaswami, B. Hull, B. Heath, M. Das, J. Richmond, A. Agarwal, and J. Palmour, "Development of 8 mW-cm2, 1.8 kV 4HSiC DMOSFETs," Mater. Sci. Forum, 527-529, 1261-1264 (2006).
2. B. Hull, M. Das, S.-H. Ryu, A. Agarwal, S. Haney, C. Jonas, C. Capell, L. Hall, J. Richmond, R. Callanan, F. Husna, A. Lelis, B. Geil, and C. Scozzie, "Status of 1200 V 4H-SiC Power DMOSFETs," presented at the 2007 International Semiconductor Device Research Symposium at the University of Maryland.
3. B. Hull, M. Das, F. Husna, R. Callanan, A. Agarwal and J. Palmour, "20 A 1200 V 4H-SiC DMOSFETs for Energy Conversion Systems," presented at the 2009 IEEE Energy Conversion Congress and Expo, San Jose, California
4. J. Zhang et al., Mat. Sci. Forum. Vol. 600-603 (2009), p. 1159.
5. J. Palmour, S. Ryu, J. Zhang, and L. Cheng, "Silicon Carbide Switching Devices: Pros and Cons for MOSFETs, JFETs and BJTs,", PCIM 2009
6. J. Zhang1, A. Burk, F. Husna, R. Callanan, A. Agarwal, J. Palmour, R. Stahlbush, and C. Scozzie," 4H-SiC Bipolar Junction Transistors: From Research to Development - A Case Study: 1200 V, 20 A, Stable SiC BJTs with High Blocking Yield,", ISPSD 2009
7. www.cree.com/products/pdf/CSD06060.pdf