HW-CVD deposited μc-Si:H for the inverted heterojunction solar cell

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 1450-1455

  Matsumoto, Y ^a   Ortega, M ^a   Sanchez V M ^a   Wunschz F ^b   Urbano, J A ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI-REFLECTION; BORON-DOPED; C-SI SUBSTRATES; CATALYST TEMPERATURE; DIBORANE; HETEROJUNCTION INTERFACES; HETEROJUNCTION SOLAR CELLS; HOT WIRE CHEMICAL VAPOR DEPOSITION; HYDROGENATED AMORPHOUS SILICON; HYDROGENATED MICROCRYSTALLINE SILICON; INVERTED STRUCTURE; IV CHARACTERISTICS; P-TYPE; SI FILMS; SOLAR CELL STRUCTURES; SUBSTRATE TEMPERATURE; SURFACE PASSIVATION; SURFACE-TEXTURING; TOTAL-AREA EFFICIENCY; TRANSPARENT CONDUCTING OXIDE;

BORON; CHEMICAL VAPOR DEPOSITION; CONVERSION EFFICIENCY; HETEROJUNCTIONS; HYDROGENATION; IODINE; MICROCRYSTALLINE SILICON; PASSIVATION; PHOSPHORUS; PHOTOVOLTAIC CELLS; PHOTOVOLTAIC EFFECTS; SOLAR CELLS; SUBSTRATES; SUN; TUNGSTEN;

AMORPHOUS SILICON;

EID: 78650117803     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614432     Document Type: Conference Paper

References (19)

1. http://sanyo.com/news/2009/05/22-1.html, May 2009, Tokyo Japan. HIT (Heterojunction with Intrinsic Thin layer) solar cell is composed of a single thin crystalline silicon wafer sandwiched by ultra-thin (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Laye amorphous silicon layers. This product provides industry-leading performance and value using state-of-the-art manufacturing techniques.
2. M. Tanaka et al., "Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT)", Jpn. J. Appl. Phys. 31, 1992, pp. 3518-3522.
3. F. Wünsch, G. Citarella, O. Abdallah, M. Kunst, Journal of Non-Crystalline Solids 352 (2006) 1962-1966.
4. M. Taguchi, K. Kawamoto, S. Tsuge, T. Baba, H. Sakata, M. Morizane, K. Uchihashi, N. Nakamura, S. Kiyama, O. Oota, Prog. Photovolt: Res. Appl. 8 (2000) 503.
5. S. Tsuda, T. Takahama, Y. Hishikawa, H. Nishiwaki, K. Wakisaka, S. Nakano, in: Proceedings of the ICAS, vol. 15, Cambridge, 1993.
6. Y.Tawada, K.Tsuge, M. Kondo, H. Okamoto and Y. Hamakawa, J. Appl. Phys. 31, (1982) 5273.
7. R.A. Sinton, R.A. Swanson, IEEE Trans. Electron Dev. 37 (1990)348.
8. D.L. Meier, H.P. Davis, R.A. Garcia, J. Salami, A. Rahatgi, A. Ebong, P. Doshi, Sol. Energy Mater. Sol. Cells 65 (2001) 621.
9. A.H. Mahan, J. Carapella, B. P. Nelson, R.S. Crandall, I. Balberg, J. Appl. Phys. 69 (1991) 6728.
10. H. Matsumura, Jpn. J. Appl. Phys. 25 (1986) L949.
11. B. Nelson, E. Iwaniczko, A. H. Mahan, O.Wang, Y. Xu, R.S. Crandall, H. M. Branz, Extended Abstract of the First International Conference on Cat-CVD (HotWire CVD) Process, 2000, p. 291.
12. A Ledermann, U. Weber, C. Mukherjee, B. Schroeder, Extended Abstract of the First International Conference on Cat-CVD (Hot-Wire CVD) Process, 2000, p. 51.
13. S. Chen, I. C. Hsieh, Solid State Technol. 39 (1996) 133.
14. H. Wiesmann, A.K. Ghosh, T. Mcmahon, M. Strongin, J. Appl. Phys. 50 (1979) 3752.
15. J. Doyle, R. Robertson, G.H. Lin, M. Z. He, A. Gallagher, J. Appl. Phys. Lett. 64 (1988) 3215.
16. M. Otobe, S. Oda, J. Non-Cryst. Solids 164/165 (1993) 993.
17. C. Godet, N. Layadi, P. Roca, Cabarrocas, Appl. Phys. Lett. 66 (1995) 3146.
18. Y. Matsumoto, M. A. Reyes, and A. Escobosa, J. Appl. Phys. 98 (2005) 014909.
19. R. Swanepoel, J. Phys. E: Sci. instrum. 16 (1983) 1214.