Fabrication of resonant tunneling structures for selective energy contact of hot carrier solar cell based on III-V semiconductors

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 1213-1216

  Yagi, Shuhei ^a,b   Okada, Yoshitaka ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; CARRIER EXTRACTION; CONDUCTIVE ATOMIC FORCE MICROSCOPES; DOUBLE BARRIERS; GAAS(001); HIGH CONVERSION EFFICIENCY; HIGH ENERGY PHOTOELECTRONS; II-IV SEMICONDUCTORS; INAS; LIGHT EXCITATION; PEAK ENERGY; PHOTOLUMINESCENCE MEASUREMENTS; QUANTUM DOTS; QUANTUM WELL; RESONANT TUNNELING STRUCTURE; REVERSE BIAS; TUNNELING CURRENT; VOLTAGE SHIFT;

BIAS VOLTAGE; CONVERSION EFFICIENCY; FABRICATION; GALLIUM ALLOYS; HOT CARRIERS; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL WAVEGUIDES; PHOTOVOLTAIC EFFECTS; RESONANT TUNNELING; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SOLAR CELLS; SOLAR ENERGY; STRUCTURAL OPTIMIZATION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 78650115596     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614058     Document Type: Conference Paper

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